PART |
Description |
Maker |
N211021 |
packaged : In Dispensing Tube
|
E-SWITCH
|
N211020 |
Packaged : In Dispensing Tube
|
E-SWITCH
|
M29F002BNT55K1T M29F002BT55K1T M29F002BB70N6T M29F |
CONNECTOR ACCESSORY Cyanoacrylate Adhesive; Dispensing Method:Tube RoHS Compliant: Yes RoHS Compliant:Yes RoHS Compliant: Yes Long latch ejector 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8,启动座单电源闪
|
STMicroelectronics N.V. 意法半导 ??????浣?
|
N411023 |
Package : In Dispensing Tubes
|
E-SWITCH
|
N411006 |
Package : In Dispensing Tubes
|
E-SWITCH
|
HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
EG3013 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
P4C164L-25JC P4C164L-25LC P4C164L-25PC P4C164-25LC |
x8 SRAM 1.5A MOSFET Drvr W/Boost, Inv, -40C to 85C, 16-SOIC 300mil, TUBE 1.5A DUAL MOSFET DRVR, -40C to 125C, 8-DFN, TUBE 1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-SOIC 150mil, TUBE 1.5A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE x8的SRAM
|
Rochester Electronics, LLC
|
2SA138407 2SA1384 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
2SA1721 2SA172107 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|